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| SUM40N03-30L New Product Vishay Siliconix N-Channel 30-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 30 FEATURES ID (A) 40 33 rDS(on) (W) 0.030 @ VGS = 10 V 0.045 @ VGS = 4.5 V Qg (Typ) 18 D TrenchFETr Power MOSFET D 175_C Junction Temperature D 100% Rg Tested TO-263 D DRAIN connected to TAB G DS G Top View Ordering Information: SUM40N03-30L--E3 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Single Pulse Avalanche Current Repetitive Avalanche Energya Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_C c TC = 25_C TC = 100_C Symbol VDS VGS ID IDM IAS EAS PD TJ, Tstg Limit 30 "20 40 36 40 30 31.25 100b 3.75 -55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Junction-to-Case Notes a. Duty cycle v 1%. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR-4 material). PCB Mountc Symbol RthJA RthJC Limit 40 1.5 Unit _C/W Document Number: 73245 S-50140--Rev. A, 24-Jan-05 www.vishay.com 1 SUM40N03-30L Vishay Siliconix New Product SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V Zero Gate Voltage Drain Current g On-State Drain Currenta IDSS ID(on) VDS = 30 V, VGS = 0 V, TJ = 125_C VDS = 30 V, VGS = 0 V, TJ = 175_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 15 A Drain-Source On-State Drain Source On State Resistancea rDS(on) VGS = 10 V, ID = 15 A, TJ = 125_C VGS = 10 V, ID = 15 A, TJ = 175_C VGS = 4.5 V, ID = 12.5 A Forward Transconductancea gfs VDS = 15 V, ID = 15 A 10 0.030 22 30 0.020 0.030 0.050 0.054 0.045 S W 30 1 3 "100 1 50 150 A m mA V nA Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargeb Gate-Source Chargeb Gate-Drain Chargeb Gate Resistance Turn-On Delay Timeb Rise Timeb Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf VDD = 15 V, RL = 0.5 W ID ^ 30 A, VGEN = 10 V, Rg = 2.5 W 0.9 VDS = 15 V, VGS = 10 V, ID = 30 A , , VGS = 0 V, VDS = 25 V, f = 1 MHz 1170 320 60 18 5.5 2 1.8 10 10 25 15 2.7 20 20 40 30 ns W 26 nC pF Turn-Off Delay Timeb Fall Timeb Source-Drain Diode Ratings and Characteristics (TC = 25_C)c Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IS ISM VSD trr IRM Qrr IF = 30 A, di/dt = 100 A/ms m IF = 30 A, VGS = 0 V 1.1 50 3.9 98 40 40 1.5 100 7.8 390 A V ns A nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Independent of operating temperature. c. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73245 S-50140--Rev. A, 24-Jan-05 SUM40N03-30L New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 40 VGS = 10, 9, 8, 7, 6, 5 V 32 I D - Drain Current (A) I D - Drain Current (A) 32 40 Vishay Siliconix Transfer Characteristics 24 4V 16 24 16 8 3V 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) 8 TC = 150_C 25_C -55_C 0 1 2 3 4 5 6 0 VGS - Gate-to-Source Voltage (V) Transconductance 30 TC = -55_C 25_C r DS(on) - On-Resistance ( ) 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0.00 0 8 16 24 32 40 0 On-Resistance vs. Drain Current 24 g fs - Transconductance (S) 18 125_C VGS = 4.5 V VGS = 10 V 12 6 0 8 16 24 32 40 ID - Drain Current (A) 1500 ID - Drain Current (A) 10 VDS = 15 V ID = 30 A Capacitance Ciss Gate Charge 1200 C - Capacitance (pF) V GS - Gate-to-Source Voltage (V) 8 900 Coss 6 600 4 300 Crss 2 0 0 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) 0 0 3 6 9 12 15 18 Qg - Total Gate Charge (nC) Document Number: 73245 S-50140--Rev. A, 24-Jan-05 www.vishay.com 3 SUM40N03-30L Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 1.8 1.6 rDS(on) - On-Resiistance (Normalized) 1.4 1.2 1.0 0.8 0.6 -50 On-Resistance vs. Junction Temperature 100 VGS = 10 V ID = 15 A I S - Source Current (A) Source-Drain Diode Forward Voltage TJ = 175_C 10 TJ = 25_C -25 0 25 50 75 100 125 150 175 1 0 0.3 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (_C) THERMAL RATINGS Maximum Drain Current vs. CaseTemperature 50 200 100 *Limited by rDS(on) Safe Operating Area 40 I D - Drain Current (A) I D - Drain Current (A) 30 10 1 ms 10 ms 100 ms dc TC = 25_C Single Pulse 20 1 10 0 0 25 50 75 100 125 150 175 TC - Case Temperature (_C) 0.1 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified www.vishay.com 4 Document Number: 73245 S-50140--Rev. A, 24-Jan-05 SUM40N03-30L New Product THERMAL RATINGS 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (sec) 10-1 1 3 Vishay Siliconix Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73245. Document Number: 73245 S-50140--Rev. A, 24-Jan-05 www.vishay.com 5 |
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